TCAD Study of Electromigration Failure Modes in Sn-Based Solder Bumps

For the realization of modern integrated circuits new interconnect structures like through-silicon-vias and solder bumps, together with complex multilevel 3D interconnect structures are gaining importance. The application of these new structures unavoidably rises different reliability issues like thermal gradients, electromigration, and stressmigration. In this paper we apply state-of-the art TCAD methods for studying electromigration in Sn solder bump. The results and discussion of the studied case have essentially improved the understanding of the role of Sn crystal anisotropy in degradation mechanism of